Research Team Led by Prof. Park Hamin (Dept. Of Electronic Engineering, Kwangwoon University) Developed a Non-Volatile Flash Memory Device Based on a Hexagonal Boron Nitride Thin Film

- Published in JCR Applied Physics Q1 Journal -

- Controlling write and erase operations of non-volatile flash memory using the energy bandgap control of the hexagonal boron nitride thin film -

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Professor Ha-Min Park (Department of Electronic Engineering) of Kwangwoon University and Professor Byung-Cheol Jang (School of Electronics Engineering) of Kyungpook National University proved that hexagonal boron nitride among new materials can be used as a charge storage layer. They verified it through TCAD (Technology computer-aided design) simulation.

Flash memory is a non-volatile memory used in most IT devices, such as servers, PCs, tablets, and smartphones, and plays a role in storing information. Current flash memory devices use a thin film material composed of a silicon oxide film, a nitride film, and an oxide film as a charge storage layer. The threshold voltage of the element changes according to the stored charges. By applying a new material rather than silicon material to these flash memory devices, the research team developed a device that can store more information in less space and operate faster.

This research was carried out with the support of the National Research Foundation of Korea and the Ministry of Education, BK-21, key research institutes, the Ministry of Trade, Industry and Energy, and Kwangwoon University. The research results were published in the professional journal Surfaces and Interfaces (JCR Applied Physics field Q1, IF: 6.137) in July 2022. It was published in the online edition under the title “Non-volatile flash memory based on Van der Waals gate stack using bandgap tunability of hexagonal boron nitride”.

*Research link: https://doi.org/10.1016/j.surfin.2022.102179