Prof. Ha Tae-Jun’s Research Team (Department of Electronic Materials Engineering), Identification...
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- 2021-11-18
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Prof. Ha Tae-Jun’s Research Team (Department of Electronic Materials Engineering), Identification of the 2D Charge Transfer Mechanism of Carbon Nanotube Thin Film Transistors
[(From left) Master's and Doctorate Integrated Course Park Sang-Jun, Professor Ha Tae-Jun, Master's and Doctorate Integrated Course, Kang Byeong-Cheol]
The research team of Professor Ha Tae-Jun (Department of Electronic Materials Science and Engineering) of the university has investigated the charge transfer mechanism in a two-dimensional (2D) random network-based single-walled carbon nanotube thin film transistor (SWCNT-TFT) in DC and time-dependent transient states (time- domain transient measurements) were identified through comparative analysis (Reference: https://doi.org/10.1007/s12274-021-3697-0)
Single-walled carbon nanotubes (SWCNTs) have recently attracted much attention as low-dimensional nanochannel materials due to their excellent electrical/material properties in thin film transistors (TFTs). In particular, many studies have been conducted to elucidate the 2D charge transfer mechanism of SWCNT-TFT, but most studies have focused on identifying the 1D charge transfer mechanism based on a single SWCNT, trapping and de-trapping charges. There are insufficient studies to investigate the random network-based 2D charge transfer mechanism in which trapping occurs.
Through this study, Professor Tae-Jun Ha's research team analyzed the charge transfer characteristics of the transient state over time for each measured temperature, extracted the velocity distribution characteristics of charges in the channel, and investigated the shallow/deep trap mechanism through a theoretical trapping model. In addition, the possibility of expanding the systematic analysis of the low-dimensional nano-semiconductor-based two-dimensional charge transfer behavior was confirmed.
Meanwhile, this research was carried out with the support of the Hankoo Research Foundation's mid-sized research project hosted by the Ministry of Science, ICT and Future Planning, and was published in Nano Research (IF: 8.183), an international academic journal in the field of nano science and nano technology, published by Springer. It was published under the title “Comprehensive Analysis of Two-Dimensional Charge Transport Mechanism in Thin-Film Transistors based on Random Networks of Single-Wall Carbon Nanotubes Using Transient Measurements.”
